报告题目(中文)：Pt/TaOx/Pt 器件的单极型阻变特性
主办单位：材料学院

 

报告内容简介：Resistance switching means to regulate the resistance of a device using a bias voltage or current. Resistance switching has been observed in most of oxide materials, and recently attracted a lot of research attention as a promising candidate for developing the universal memory devices. In this work, we report the unipolar resistance switching properties of Pt/TaOx/Pt structures. The TaOx thin film was deposited using pulsed laser deposition, and the device size is about 90 um. Depending on the substrate temperature used during the deposition, the composition of the TaOx thin film showed dramatic changes, which results in different current-voltage characteristics. Regarding the unipolar resistance switching observed in Pt/TaOx/Pt, we analyzed forming free switching and forming required switching devices. Our results showed for the first time that in addition to the difference in forming process, the conducting filament formation, shape, and evolution process are also quite different.
报告人简介：刘春莉博士出生于黑龙江省绥化市。1990年考入清华大学电机工程系。1995年和1998年取得学士和硕士学位。1998年9月进入美国密苏里州华盛顿大学电机工程系，2002年获得博士学位。2005年在韩国首尔大学物理系开始博士后研究工作，研究方向为激光脉冲法的ZnO薄膜生长和阻变记忆体的机制研究。2009年进入韩国外国语大学物理系至现在，任讲师，助教授，和副教授。现在的主要研究方向为阻变记忆体和磁性纳米材料。
报告人单位：韩国外国语大学物理系