报 告人：张洪亮 副研究员；
报告时间：2015年5月15日星期五上午10点10
地 点：延长校区平板显示中心会议室
Abstract
Electric-Double-Layer thin-film transistors (EDLTs) are regarded as ideal devices for potential portable sensors because of large EDL capacitance (>1μF/cm2) at the dielectric/semiconductor interface and low-voltage operation. In general, EDLTs used to be fabricated using organic proton conductors and organic semiconductors. However, such organic materials usually show a limited chemical stability and durability as well as a low field-effect mobility. To avoid these disadvantages, a novel type of field-effect device, oxide-based EDLTs with relatively simple process were fabricated using nanogranular Al2O3, SiO2 and WOx proton conducting films (PECVD and sputtering) as gate dielectrics, and transparent conductive indium-zinc-oxide (IZO) and indium-tin-oxide films (ITO) as electrodes (source and drain) and channel. Such EDLTs exhibit a low operation voltage of ≤1.8 V, a large current on/off ratio of 106 and a high field-effect mobility of 20 cm2/V·s. This results will provide experimentally and theoretically strong basis and foundation for portable chemical sensors, biosensors, and humidity sensors.
报告人简介：张洪亮，博士，副研究员，硕士生导师。 2003年获得兰州大学物理学学士学位；2008年和2011年分别获得兰州大学凝聚态物理硕士、博士学位，硕士、博士期间联合培养在兰州大学和中国工程物理研究院从事光电薄膜材料的制备和性能研究；2011年7月进入中科院宁波材料所从事博士后研究，研究方向为物理气相沉积和化学气相沉积的薄膜材料制备及其在晶体硅太阳能电池和低电压氧化物薄膜晶体管中的应用，出站后留所，2013年12月晋升为副研究员。主持国家自然科学基金、中国博士后基金(一等)、浙江省公益基金、宁波市自然科学基金、浙江省博士后择优资助等项目。目前已在Applied Physics Letters、Journal of Materials Chemistry、IEEE Electron Device Letters等刊物上发表SCI论文20余篇，申请中国专利8项。
