报 告人：曹鸿涛教授；

报告时间：2015年5月15日星期五上午9点30

地 点：延长校区平板显示中心会议室

摘要：Abstract

Oxide thin-film transistor (TFT)-based electronic components such as inverters and logic circuits are attractive due to their low-cost, low-temperature fabrication, and ease of large-area processability. In addition to exploring high performance unipolar oxide TFTs, ambipolar thin film transistors based on both p-type and n-type channels in one device with thereby simplified circuit design and fabrication processes (No separate patterning or/and doping steps needed), are gaining ever-increasing attention as an alternative approach to realize integrated circuits like radio-frequency identification (RFID) tags or drivers for display applications. In this work, the origin of the unique bipolar property of SnO was discussed based on theoretical calculations, and SnO ambipolar TFTs with balanced hole and electron field-effect mobilities were demonstrated through balancing both the injection and the transport of holes and electrons. Subsequently, ambipolar CMOS-like inverters working in both the first and third quadrants were demonstrated with output voltage gains over 100 by integrating two identical ambipolar SnO TFTs, behaving as a valuable building block of oxide logic circuits. Moreover, the inverters exhibit excellent environmental stability, a prerequisite for the future ubiquitous electronics. These results suggest that, a simple route in realizing oxide-based ambipolar TFTs and CMOS-like inverters, offers a robust addition to the existing CMOS technology community.

个人简介: Hongtao Cao is currently a professor at Ningbo Institute of Material Technology & Engineering (NIMTE), Chinese Academy of Sciences. He received his BS. and PhD at Northeastern University in 1998 and Institute of Metal Research in 2004, respectively. Then he had worked at Royal Institute of Technology, Sweden, as a Postdoctoral Research Fellow ranging from 2004 to 2007. In March 2007, He joined NIMTE as a professor. The members of Cao’s group are committed in fundamental research focusing on exploring and understanding thin films of oxide semiconductors & dielectrics, constructing oxide-based hetero- or homo-structures, developing novel electronic devices, energy-efficiency-related modules, and prospective optoelectronic devices. He has published more than 40 peer-reviewed scientific papers on Phys. Rev. B., Appl. Phys. Lett., ACS Appl. Mater. Interfaces, etc., and held several patents. The ongoing research is supported by 973, NSFC, local government sponsored projects, and industry collaboration partners.